RF Switch with Adaptive Drain and Source Voltage

ABSTRACT

A radio frequency (RF) switch includes a common port, a first port, and a second port, a first semiconductor switching element disposed in a first RF pathway between the common port and the first port, a second semiconductor switching element disposed in a second RF pathway between the common port and the second port, a first pair of direct current (DC) blocking capacitors disposed to isolate the first semiconductor switching element in the first RF pathway, and a second pair of DC blocking capacitors disposed to isolate the second semiconductor switching element in the second RF pathway. The respective pairs of DC blocking capacitors allow for different bias voltages to be applied to the respective RF pathways. A charge-discharge circuit may also be employed to decrease transient switching time of the RF switch.

FIELD OF THE INVENTION

The present invention relates to solid state radio frequency (RF) switches. More particularly, the present invention relates to an approach for biasing elements of an RF switch to achieve higher power handling capability and faster switching time.

BACKGROUND OF THE INVENTION

RF switches are important building blocks in many wired and wireless communication systems. Solid state RF switches are found in many different communication devices such as cellular telephones, wireless pagers, wireless infrastructure equipment, satellite communications equipment, and cable television equipment. As is well known, the performance of solid state RF switches may be characterized by one of any number operating performance parameters including insertion loss and switch isolation. Performance parameters are often tightly coupled, and any one parameter can be emphasized in the design of RF switch components at the expense of others. Other characteristics that are important in RF switch design include ease and degree (or level) of integration of the RF switch, complexity, yield, return loss and, of course, cost of manufacture.

Still other performance characteristics associated with RF switches is power handling capability and switching speed. When the power handling capability of an RF switch is low, the RF switch might not be able to isolate one path from another if the input signal is too great. That is, the peak-to-peak voltage swing of an input signal might be sufficiently high to overcome the reverse bias of a given transistor or transistor group, thus effectively causing such a transistor or transistor group that has been placed in an OFF state (reverse bias state) to be in an undesirable ON state, and effectively ruin the switching capability of the RF switch.

In addition, there is continue desire to improve upon the switching speed of an RF switch.

SUMMARY OF THE INVENTION

Embodiments of the present invention provide a radio frequency (RF) switch that includes a common port, a first port, and a second port. A first semiconductor switching element is disposed in a first RF pathway between the common port and the first port, and a second semiconductor switching element is disposed in a second RF pathway between the common port and the second port. A first pair of direct current (DC) blocking capacitors is disposed to isolate the first semiconductor switching element in the first RF pathway, and a second pair of DC blocking capacitors is disposed to isolate the second semiconductor switching element in the second RF pathway. The respective pairs of DC blocking capacitors allow for different bias voltages to be applied to the respective RF pathways and as a result increase the permissible input signal amplitude to the RF switch. A charge-discharge circuit may also be employed to decrease transient switching time of the RF switch by enabling a low resistance path between (1) respective source and drain nodes of the semiconductor switching elements and corresponding DC blocking capacitors and (2) appropriate voltage sources, thus enabling relative quick charging and dis-charging of said capacitors. The charge-discharge circuit may be engaged for a very short time upon detection of gate control signal used to enable or dis-able a given one of the RF pathways of the RF switch.

BRIEF DESCRIPTION OF THE DRAWINGS

The present invention will become more readily apparent to those ordinarily skilled in the art after reviewing the following detailed description and accompanying drawings, in which:

FIG. 1 shows a conventional RF switch including application of a constant BIAS voltage to source and drain nodes of a switching element.

FIG. 2 shows an RF switch including application of an adaptive BIAS voltage to source and drain nodes of a switching element in accordance with an embodiment of the present invention.

FIG. 3 shows the permissible voltage swing of an input signal to the conventional RF switch of FIG. 1 compared to the permissible voltage swing of an RF switch in accordance with an embodiment of the present invention.

FIG. 4 shows another aspect of an RF switch including circuitry to improve the switching time and isolation of an RF switch in accordance with the present invention.

FIG. 5 shows yet another embodiment of an RF switch including a charge-discharge (CDC) circuit employed to still further decrease switching time of the switch in accordance with the present invention.

FIGS. 6A-6C show details of the CDC circuit, a CDC control circuit and a timing diagram in connection with the CDC circuit, respectively, in accordance with an embodiment of the present invention.

FIG. 7 shows a simulation of RF switch operation using the CDC circuit.

FIG. 8 depicts a series of operations that may be performed in accordance with embodiments of the present invention.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

Reference is now made to FIG. 1, which depicts a conventional RF switch 100. RF switch 100 includes an RFC (radio frequency common) port, a first port RF1 and a second port RF2. A first semiconductor switching element M1 is disposed between RFC and first port RF1, and a second semiconductor switching element M2 is disposed between RFC and second port RF2. M1 and M2 may be, for example, MOSFET devices having respective source nodes (VS1, VS2), drain nodes (VD1, VD2) and gate control nodes (105(1), 105(2)). Although MOSFET devices are described herein as the semiconductor switching elements, the switching elements may alternatively comprise bipolar transistors among other semiconductor switching elements.

Resistors 110(1)-110(4) are connected to each of the source and drain nodes, and a bias voltage VBIAS is applied to the respective source and drain nodes. As will be explained below, VBIAS is a constant voltage, the application of which enables RF switch 100 to accommodate AC input signals applied to RFC port.

In addition, RF switch 100 includes resistors 112(1), 112(2) connecting the source and drain nodes of the respective switching elements M1, M2. Finally, RF switch 100 includes several DC blocking capacitors 115, 120(1) and 120(2). DC blocking capacitor 120 isolates RFC port from the source nodes VS1, VS2 of M1 and M2. DC blocking capacitors 120(1), 120(2) isolate ports RF1 and RF2 from respective drain nodes VD1, VD2.

RF switch 100 operates as follows. With reference to Table 1 below, if it is desired to have an RF signal pass from RFC port to RF1, M1 is turned ON (such that an AC signal can pass therethrough) and M2 is turned OFF (such that an AC signal cannot pass therethrough). This is accomplished by applying, in the case of a MOSFET, a 3.3 volt control signal VC1 to gate node 105(1) of M1 and simultaneously applying a 0 volt control signal VC2 to gate node 105(2) of M2. Simultaneously, a constant bias signal VBIAS of 1.65 volts is supplied through resistors 110(1)-110(4) to the respective source nodes (VS1, VS2) and drain nodes (VD1, VD2) of switching elements M1 and M2.

TABLE 1 Vgs Vgs over-drive over-drive & reverse VD2 = & reverse VC1 VD1 = VS1 bias VC2 VS2 bias RFC-RF1 3.3 V 1.65 V   1.65 V   0 V 1.65 V −1.65 V RFC-RF2   0 V 1.65 V −1.65 V 3.3 V 1.65 V   1.65 V

In this configuration, V_(GS) of M1 is 1.65 volts (3.3-1.65) and V_(GS) of M2 is −1.65 volts (0-1.65). Accordingly, M1 is turned ON wherein the RF pathway between RFC and RF1 is enabled, and M2 is turned OFF wherein the RF pathway between RFC and RF2 is disabled.

To have an RF signal supplied at RFC port pass to port RF2 (or vise versa), the opposite control signaling is applied to VC1 and VC2. Specifically, a 0 volt control signal VC1 is applied to gate node 105(1) of M1 and, simultaneously, a 3.3 volt control signal VC2 is applied to gate node 105(2) of M2. In this configuration (RFC→RF2), V_(GS) of M1 is −1.65 volts (OFF) and VGS of M2 is 1.65 volts (ON).

Based on the foregoing, those skilled in the art will appreciate that the maximum voltage swing that can be handled by RF switch 100 of FIG. 1 is 3.3 volts plus twice (i.e., 2 times) the threshold voltage (0.3 volt) of switching elements M1 or M2, i.e., the maximum input voltage swing is approximately 3.9 volts. FIG. 3 depicts the maximum voltage swing of RF switch 100 at 310. That is, a signal input to RFC port of RF switch 100 beyond plus/minus 1.95 volts (centered around −1.65 volts) will swamp or overwhelm the switching element that is set in its OFF state.

In effort to increase the permissible input signal amplitude or voltage swing, the conventional RF switch 100 of FIG. 1 is modified as shown in FIG. 2. RF switch 200 of FIG. 2 is similar to RF switch 100 of FIG. 1 except that DC blocking capacitor 115 is replaced by two separate blocking capacitors 225(1) and 225(2), and instead of supplying a constant VBIAS voltage to the respective source and drain nodes of switching elements M1 and M2, adaptive/changeable bias signals are supplied to the source nodes VS1, VS2 and drain nodes VD1, VD2 of switching elements M1, M2 depending on which RF pathway is to be enabled. These adaptable, changeable bias signals VC1B, VC2B (as well as VC1 and VC2) may be supplied by a control/bias signal generating module 210 having as inputs low and high voltage signals available in the system in which RF switch 200 is incorporated.

The operation of RF switch 200 of FIG. 2 is discussed next with reference to Table 2 below. If it is desired to have an RF signal pass from RFC port to RF1, M1 is turned ON (such that an AC signal can pass therethrough) and M2 is turned OFF (such that an AC signal cannot pass therethrough). This is accomplished by applying, in the case of a MOSFET, a 3.3 volt control signal VC1 to gate node 105(1) of M1 and simultaneously applying a 0 volt control signal VC2 to gate node 105(2) of M2. Meanwhile, instead of a constant bias signal VBIAS of 1.65 volts being applied to the respective source and drain nodes (as in the prior art), a control signal VC1B of 0 volt is supplied through resistors 110(1)-110(2) to source node VS1 and drain node VD1 of switching element M1, and a control signal VC2B of 3.3 volts is supplied through resistors 110(3)-110(4) to source node VS2 and drain node VD2 of switching element M2.

TABLE 2 Vgs Vgs over-drive over-drive VD1 = & reverse & reverse VC1 VS1 bias VC2 VD2 = VS2 bias RFC-RF1 3.3 V   0 V   3.3 V 0 3.3 V −3.3 V RFC-RF2 0 3.3 V −3.3 V 3.3   0 V   3.3 V

In this configuration, V_(GS) of M1 is 3.3 volts (3.3-0) and V_(GS) of M2 is −3.3 volts (0-3.3). Accordingly, M1 is turned ON, and M2 is turned OFF.

To have an RF signal supplied at RFC port pass to RF2, the opposite control signaling is applied to VC1 and VC2, and to VC1B and VC2B. Specifically, a 0 volt control signal VC1 is applied to gate node 105(1) of M1 and, simultaneously, a 3.3 volt control signal VC2 is applied to gate node 105(2) of M2. Also, control voltage VC1B is maintained at 3.3 volts (thus placing VS1 and VD1 at 3.3 volts) and control voltage VC2B is maintained at 0 volt (thus placing VS2 and VD2 at 0 volt). In this configuration (RFC→RF2), V_(GS) of M1 is −3.3 volts (OFF) and VGS of M2 is 3.3 volts (ON).

With the increased reverse bias of V_(GS) in RF switch 200 compared to the reverse bias of V_(GS) of RF switch 100, those skilled in the art will appreciate that the maximum voltage swing that can be handled by RF switch 200 of FIG. 2 is 6.6 volts plus twice (i.e., 2 times) the threshold voltage (0.3 volt) of switching elements M1 or M2, i.e., the maximum input voltage swing can be approximately 7.2 volts.

FIG. 3 depicts, at 320, the maximum voltage swing of an input signal to RF switch 200. Here, an input signal to RFC node of RF switch 200 beyond plus/minus approximately 3.6 volts (centered around −3.3 volts) can swamp or overwhelm the switching element that is set in its OFF state. However, such a voltage swing is almost twice that allowable in the configuration of conventional RF switch 100.

The introduction of DC blocking capacitors 225(1) and 225(2) enable the applied bias signals (VC1B and VC2B) to be different from one another since the source nodes of the respective switching devices M1 and M2 are isolated from each other.

FIG. 4 shows another aspect of the present invention. RF switch 400 of FIG. 4 is substantially the same as RF switch 200 of FIG. 2 except for the addition of semiconductor switching elements M3 and M4 along with associated resistors 410(1)-410(4), 412(1)-412(2) and DC blocking capacitors 420(1)-420(4) which, in pairs, respectively isolate switching elements M3 and M4. In this configuration, M3 and M4, when turned ON, function as shunt paths for the RF pathways with which they are respectively associated.

In addition, RF switch 400 includes resistor 430 via which a 0 volt signal is supplied to the RFC input node.

As shown in FIG. 4, RF1 is designated as a transmit (TX) port and RF2 is designated as a receive (RX) port. In this configuration, RF switch 400 could be employed in, e.g., a mobile or wireless device with the RFC node connected to an antenna that serves as both a transmit antenna and a receive antenna. When the mobile device is in a transmit mode, the RF pathway leading to RX/RF2 is preferably resistant to RF energy passing therethrough, i.e. that RF pathway is disabled. If transmitted RF energy were to pass through that pathway, that energy could damage a front end of a receiver of the mobile device. As a result, it is important to be able to isolate the receiver from the transmitter. RF switches like those described herein are designed for that very purpose.

Generally speaking, a signal received at RFC port via an antenna connected thereto is less powerful than a signal being transmitted via RFC port via such an antenna. Thus, in accordance with the instant aspect of the present invention, the control and bias signals supplied to RF switch 400 can be different depending on whether the switch is configured to receive or transmit an RF signal.

With reference to Table 3 below, the different control and bias signals in connection with the operation of RF switch 400 are explained next.

TABLE 3 TX on (high SW = 3.3 V VA = SWB = 0 V VB = SW = 3.3 V RX reversed P1dBm) bias = −3.3 V Change to RX SW = 0.5 V VA = SWB = 2.8 V VB = SW = 0.5 V TX reversed (low P1dBm) bias = −2.3 V

Preliminary, it is noted that the control signals SW and SWB in FIG. 4 are equivalent to control signals VC1 and VC2 of FIGS. 1-3 in that they control the gate control nodes of respective semiconductor switching elements M1 and M2 (as well as those of M3 and M4). However, the voltage levels of the control signals SW and SWB and the bias signals are as explained herein below and indicated in Table 3 above.

Assume RF switch 400 is configured to pass a signal to RFC to be transmitted. That is, the RF pathway RFC→TX/RF1 is selected. This is accomplished by setting SW to 3.3 volts and SWB to 0 volt. In this configuration, M1 is turned ON, M3 is turned OFF (i.e., the shunt is an open circuit) and node VA is 0 volt. Meanwhile, M2 is turned OFF, and M4 is turned ON, thus enabling the shunt path to ground for the RFC→RX/RF2 pathway. Node VB is set to 3.3 volts. Thus, in this configuration, M2 is reverse biased at −3.3 volts (V_(GS)=0-3.3).

However, different control and bias signals can be used when disabling the transmit side of the RF switch in favor of the receive side as shown in the second row of Table 3. Specifically, SW can be set to 0.5 volt and SWB can be set to 2.8 volt. In this configuration, V_(GS) of M1 is −2.3 volts (0.5-2.8), and thus OFF. M3 is turned ON thus enabling that shunt path. On the receive side, V_(GS) of M2 is 2.3 volts (2.8-0.5), and thus is ON, and M4 is turned OFF. The use of different control signals for enabling the RF switch for transmit and receive has a particular benefit. Namely, when transitioning from “TX on” to “RX on” the response time of the RF switch can be improved.

Specifically, when changing from “TX on” to “RX on” capacitor 225(1) is charged from 0 volt to 2.8 volts and capacitor 225(2) is dis-charged from 3.3 volts to 0.5 volt. If the 0/3.3 volt control signals (versus the 0.5/2.8 volt control signals) were used, the charge and dis-charge time would be commensurate with time needed to charge and dis-charge the capacitors between 0 and 3.3 volts.

In sum, using different control voltages to enable/disable RF pathways in RF switch 400 can reduce transient switching time in the context of switching between higher power transmission TX and lower power receiving RX in that the required reversed bias amount can be different for TX transmission (high power with the reverse bias=−3.3V) and RX receiving (low power with reverse bias=−2.3V).

Reference is now made to FIG. 5. Yet another way to reduce the transient switching time of an RF switch in accordance with an embodiment of the present invention is to provide one or more charge-discharge (CDC) circuits 510 to assist in charging or discharging capacitors 225(1) and 225(2) upon enabling/disabling a given RF pathway through the RF switch. CDC circuits 510 may be deployed instead of or in addition to the application of different control and bias signals discussed above with respect to FIGS. 2 and 4. RF switch 500 depicted in FIG. 5A is identical to RF switch 200 except for the addition of CDC circuits 510. As will be explained below, CDC circuits 510 are configured to quickly charge or discharge capacitors 120(1), 120(2), 225(1) and 225(2), thereby more quickly attaining the desired V_(GS) value (and resulting ON/OFF state of the semiconductor switching elements) for the given desired state of RF switch 500. At a high level, each CDC circuit 510 operates to provide a low resistance path to speed the charging or dis-charging of the several DC blocking capacitors.

An example of a possible implementation of CDC circuit 510 is shown in FIG. 6A. In this implementation, CDC circuit 510 comprises two sets of a plurality of series connected or stacked CMOS transistors in parallel with each other. The first set 610 may be N-type transistors arranged in a chain between, e.g., drain node VD1 and bias control signal VC1B. The second set 620 may be P-type transistors likewise arranged in a chain between drain node VD1 and bias control signal VC1B. The respective gate control nodes of the respective transistors may be controlled by a CDC control module 630. The same circuitry may be deployed between VS1 and VC1B, VS2 and VC2B and, VD2 and VC2B.

In one possible implementation, CDC control module 630 may comprise a rising/falling edge detection unit 632 comprising appropriate logic including at least a delay cell, the purpose of which will be explained below. Inputs to the rising/falling edge detection unit 632 may be control signals VC1 and/or VC2. The output of rising/falling edge detection unit 632 is an enable signal (denoted as “EN”). Enable signal EN is supplied to an inverter 634, which outputs an inverse enable signal denoted as ENB.

As indicated in FIG. 6A, the EN signal is supplied to the gate control nodes of the respective transistors in the first set 610 of a plurality of transistors and the ENB signal is supplied to the gate control nodes of the respective transistors in the second set 620 of a plurality of transistors.

FIG. 6C shows a timing diagram of control signal VC1 or VC2 650 switching between high and low. Superimposed on signal 650 as the broken line is the timing 660 or application of CDC circuit 510, as controlled by the EN and ENB signals. Specifically, as the rising edge of, e.g., VC1 is detected by rising/falling edge detection unit 632, the EN signal is applied to the gates of the first set of a plurality of transistors 610, thus turning those transistors ON. The ENB signal is applied to the gates of the second set of a plurality of transistors 620, thus also turning those respective transistors ON.

With reference to the leftmost side of the plot in FIG. 6C, assume VC1 is low, meaning that the RF pathway between RF1 and RFC is dis-abled. In this configuration VC1B may be set to, e.g., 3.3 volts, which means that capacitors 120(1), 225(1) are charged to that same voltage. When transitioning that RF pathway to an enabled state, VC1 goes high, e.g., 3.3 volts, and VC1B is set to low, e.g. 0 volt. However, since the capacitors 120(1), 225(1) are already charged to 3.3 volts, V_(GS) at the instant the 3.3. volt VC1 control signal is applied would be zero (i.e., 3.3-3.3) and thus V_(GS) would not be greater than the threshold voltage V_(th) to turn M1 ON, let alone placing M1 in an overdrive state, which is desirable in switching applications.

To more quickly increase V_(GS) into an overdrive state, CDC circuit 510 is used to quickly discharge capacitors 120(2), 225(2) for a period of time, set by CDC control module 630, and as shown by CDC timing line 660. Specifically, when VC1 goes high, VC1B goes low (see discussion of FIG. 2 above). And, during the application of the CDC circuit 510, the EN signal is applied to the gates of the first set 610 of the plurality of transistors and the ENB signal is applied to the gates of the second set 620 of the plurality of transistors. As such, during CDC circuit application, a very low resistance pathway (compared to via resistors 110(1), 110(2) ) is provided with VC1B at 0 volt, thus allowing for, e.g., DC blocking capacitor 120(1) to quickly discharge from 3.3 volts to 0 volt (the potential of VC1B). The same dis-charging occurs for DC blocking capacitor 225(1).

As indicated in the timing diagram of FIG. 6C, application of the CDC circuit is only for a limited amount of time and may be dependent on how long it takes for the respective DC blocking capacitors to be discharged. The delay element within CDC control module 632 provides the desired amount of time over which to apply the effects of CDC circuit 510.

The discussion above concerned transitioning an RF pathway from dis-abled to enabled and discharging DC blocking capacitors. However, those skilled in the art will appreciate that CDC circuit 510 also assists in charging DC blocking capacitors when a given RF pathway is transitioning from enabled to dis-abled. In the enabled case, VC1B is set to e.g., 0 volt. This means that the DC blocking capacitors are likewise at 0 volt before the transition from enabled to dis-abled. When transitioning from enabled to dis-abled, VC1B goes from low to high (e.g., 0 to 3.3 volts). At this point, it is desirable to quickly charge the capacitors so that the reverse bias of the switching element is quickly increased to ensure a quick disabling of that RF pathway.

Accordingly, when VC1B goes high and the CDC circuit is enabled, a low resistance path to a 3.3 volt source (VC1B) is applied directly to the DC blocking capacitors in the selected RF pathway.

Indeed, in accordance with a preferred embodiment, CDC circuit 510 is simultaneously applied to the RF pathway transitioning from enabled to dis-abled and to the RF pathway transitioning from dis-abled to enabled, as shown in FIG. 5, thereby reducing the time needed to switch the RF switch.

FIG. 7 depicts a simulation of outputs at RF1 and RF2 employing the CDC circuit 510 as described herein. As shown, soon after VC1 goes high, the EN signal (VEN) goes high for a relatively short period of time (about 100 ns). In the simulation, VC2 is low. In such a state, VC2B should be high, also causing VS2/VD2 to be high (see discussion of FIG. 2). In fact, the more quickly nodes VS2/VD2 reach a high state (with a simultaneous application of a low VC2) the more quickly the switch can isolate the RF2 RF pathway. As shown in FIG. 7, VS2 reaches a high state within about 100 ns.

Likewise, as further shown, when VC1 is low and VC2 is high, the RF pathway towards RF2 is enabled. In this case, it is desirable to have V_(GS) of M1 reversed bias and OFF as quickly as possible. As shown, in FIG. 7, when VC2 goes high, the CDC circuit is enabled with VEN and VS1/VD1 are quickly set to high within about 100 ns.

Simulations have shown that without the use CDC circuit 510 in a switch configuration like that shown by 500 in FIG. 5, the transient time of the source and drain nodes may be on the order of greater than 3 μs.

FIG. 8 depicts a series of operations that may be performed to operate an RF switch in accordance with embodiments of the present invention. Although the several steps are shown in a particular sequence, those skilled in the art will appreciate that the depicted sequence is merely an example, and in fact, one or more of the steps may be performed substantially simultaneously, or in a different order. At 810, a first gate control signal is applied to a first switching device. At 812, a second gate control signal is applied to a second switching device. At 814, a first bias signal is applied to source and drain nodes of the first switching device. At 816, a second bias signal is applied to source and drain nodes of the second switching device. At 818, shunt paths associated with RF pathways in which the first and second switching devices are disposed may be controlled in an effort to better isolate a given RF pathway. Finally, at 820, a low resistance path may be enabled between respective source and drain nodes of the first and second switching devices to reduce the transient switching time of the RF switch by promoting quick charging and dis-charging of DC blocking capacitors in electrically connected to source and drain nodes of the first and second switching devices.

While the invention has been described in terms of what is presently considered to be the most practical and preferred embodiments, it is to be understood that the invention needs not to be limited to the above embodiments. On the contrary, it is intended to cover various modifications and similar arrangements included within the spirit and scope of the appended claims which are to be accorded with the broadest interpretation so as to encompass all such modifications and similar structures. 

What is claimed is:
 1. A radio frequency (RF) switch, comprising: a common port; a first port; a second port; a first semiconductor switching element disposed in a first RF pathway between the common port and the first port; a second semiconductor switching element disposed in a second RF pathway between the common port and the second port; a first pair of direct current (DC) blocking capacitors disposed to isolate the first semiconductor switching element in the first RF pathway; and a second pair of DC blocking capacitors disposed to isolate the second semiconductor switching element in the second RF pathway.
 2. The RF switch of claim 1, wherein the RF switch is configured to receive at the first port an RF signal having a peak-to-peak voltage swing of at least 7.2 volts, and output the RF signal through the common port.
 3. The RF switch of claim 1, further comprising a control signal generating module configured to supply gate control signals to gate nodes of the first and second semiconductor switching elements.
 4. The RF switch of claim 3, wherein the control signal generating module is further configured to supply adaptive bias signals to source and drain nodes of the first and second semiconductor switching elements.
 5. The RF switch of claim 4, wherein to enable the first RF pathway, a high control signal is supplied to a gate of the first semiconductor switching element, a low bias signal is supplied to the source and drain nodes of the first semiconductor switching element; and a low control signal is supplied to a gate of the second semiconductor switching element, and a high bias signal is supplied to the source and drain nodes of the second semiconductor switching element.
 6. The RF switch of claim 4, wherein to enable the second RF pathway, a high control signal is supplied to a gate of the second semiconductor switching element, and a low bias signal is supplied to the source and drain nodes of the second semiconductor switching element; and a low control signal is supplied to a gate of the first semiconductor switching element, and a high bias signal is supplied to the source and drain nodes of the first semiconductor switching element.
 7. The RF switch of claim 1, further comprising a first shunt path associated with the first RF pathway, and a second shunt path associated with the second RF pathway.
 8. The RF switch of claim 7, wherein, when the first RF pathway is enabled, the first shunt pathway is disabled and the second shunt path is enabled.
 9. The RF switch of claim 7, wherein, when the second RF pathway is enabled, the second shunt pathway is disabled and the first shunt path is enabled.
 10. The RF switch of claim 1, wherein a combination of control and bias signals is different depending on whether the first RF pathway or the second RF pathway is enabled.
 11. The RF switch of claim 10, wherein the first RF pathway is an RF transmit pathway and the second RF pathway is an RF receive pathway.
 12. The RF switch of claim 11, wherein when the RF transmit pathway is enabled, a gate control signal applied to a gate of the first semiconductor switching element is about 3.3 volts and a bias signal applied to source and drain nodes of the first semiconductor switching element is about 0 volt; and a gate control signal applied to a gate of the second semiconductor switching element is about 0 volt and a bias signal applied to source and drain nodes of the second semiconductor switching element is about 3.3 volts.
 13. The RF switch of claim 11, wherein when the RF receive pathway is enabled, a gate control signal applied to a gate of the second semiconductor switching element is about 2.8 volts and a bias signal applied to source and drain nodes of the second semiconductor switching element is about 0.5 volt; and a gate control signal applied to a gate of the first semiconductor switching element is about 0.5 volt and a bias signal applied to source and drain nodes of the first semiconductor switching element is about 2.8 volts.
 14. The RF switch of claim 1, wherein the semiconductor switching elements are one of complementary metal oxide semiconductor (CMOS) devices or bipolar semiconductor devices.
 15. A method of operating a radio frequency (RF) switch, comprising: applying a first gate control signal to a first switching device disposed in a first RF pathway; applying a second gate control signal, different from the first gate control signal, to a second switching device disposed in a second RF pathway; applying a first bias signal to source and drain nodes of the first switching device; and applying a second bias signal, different from the first bias signal, to source and drain nodes of the second switching device.
 16. The method of claim 15, further comprising receiving an input signal having a peak-to-peak voltage swing of 6.6 volts and outputting the input signal through a port of the RF switch.
 17. The method of claim 15, further comprising controlling a first shunt path associated with the first RF pathway and a second shunt path associated with the second RF pathway.
 18. The method of claim 15, wherein the first and second gate control signals differ depending on whether the RF switch is configured to receive an RF signal through a common port thereof or whether the RF switch is configured to transmit an RF signal through the common port.
 19. The method of claim 18, wherein, when the RF switch is configured to receive an RF signal through the common port, the first gate control signal is about 0.5 volt and the second gate control signal is about 2.8 volts.
 20. The method of claim 18, wherein, when the RF switch is configured to transmit an RF signal through the common port, the first gate control signal is about 3.3 volts and the second gate control signal is about 0 volt. 